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| MITSUBISHI SEMICONDUCTOR TRIAC BCR6AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR6AM OUTLINE DRAWING 10.5 MAX Dimensions in mm 4.5 4 16 MAX 3.20.2 1.3 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 7.0 3.60.2 0.5 2.6 123 24 1 2 33 4 Measurement point of case temperature * IT (RMS) ........................................................................ 6A * VDRM ..............................................................400V/600V * IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets * stereo * washing machine * infrared kotatsu * carpet * electric fan, solenoid drivers, small motor control, copying machine, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=103C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 6 60 15 5 0.5 10 2 -40 ~ +120 -40 ~ +125 2.0 Unit A A A2s W W V A C C g V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR6AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=9A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- V3 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.7 1.5 1.5 1.5 30 V5 30 V5 30 V5 -- 2.5 -- Unit mA V V V V mA mA mA V C/ W V/s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. V5. High sensitivity (IGT20mA) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-3A/ms 3. Peak off-state voltage VD=400V L 10 Unit Test conditions Commutating voltage and current waveforms (inductive load) 8 400 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD 12 600 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 RATED SURGE ON-STATE CURRENT ON-STATE CURRENT (A) TC = 25C 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR6AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 3 2 VGM = 10V GATE VOLTAGE (V) PG(AV) = 0.5W PGM = 5W GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 IRGT III IGM = 2A IFGT I IRGT I IFGT I IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 101 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) 20 18 16 360 14 CONDUCTION 12 RESISTIVE, INDUCTIVE 10 LOADS 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 140 120 100 80 60 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 01234 5 6 7 8 9 10 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR6AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) 120 100 80 120 120 t2.3 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 60 NATURAL CONVECTION 40 CURVES APPLY REGARDLESS OF 20 CONDUCTION ANGLE 0 012345 6 RESISTIVE, INDUCTIVE LOADS 7 8 9 10 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) DISTRIBUTION + T2 , G+ TYPICAL - - T2 , G EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, + T2 , G- TYPICAL EXAMPLE Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR6AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C COMMUTATION CHARACTERISTICS 102 7 5 4 3 2 101 7 5 4 3 2 TYPICAL EXAMPLE TC = 125C IT = 4A = 500s VD = 200V f = 3Hz I QUADRANT MINIMUM CHARACTERISTICS VALUE BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT I QUADRANT III QUADRANT 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 6V V A RG 6V V A RG GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE 3 Feb.1999 |
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